MGW20N120 Datasheet (Motorola) - Insulated Gate Bipolar Transistor

MGW20N120, Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.

Fast switching characteristics