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MGW20N120 Datasheet - Motorola

MGW20N120 Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics .

MGW20N120 Datasheet (104.86 KB)

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Datasheet Details

Part number:

MGW20N120

Manufacturer:

Motorola

File Size:

104.86 KB

Description:

Insulated gate bipolar transistor.

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