MGW30N60 Insulated Gate Bipolar Transistor

Motorola

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW30N60/D Insulated Gate Bipolar Transistor N *Channel Enhancement<.

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Datasheet Specifications

Part number: MGW30N60
Manufacturer: Motorola
File Size: 214.50 KB
Datasheet: MGW30N60_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor

Features

* horized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Moto

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.
* Industry Standard High Power TO
* 247 Package with Isolated Mounting Hole
* High Speed Eoff: 60 mJ per Amp typic

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MGW30N60 Insulated Gate Bipolar Transistor Motorola

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