MGW21N60ED Insulated Gate Bipolar Transistor

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N *Chann.

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Datasheet Specifications

Part number: MGW21N60ED
Manufacturer: Motorola
File Size: 152.76 KB
Datasheet: MGW21N60ED_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor

Features

* .050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 A K P
* Y
* V F D 0.25 (0.010) M H J G DIM A B C D E F G H J K L P Q R U V Y Q S GATE COLLECTOR EMITTER COLLECTOR CASE 340K
* 01 ISSUE A

Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost. This new E
* series introduces an energy ef

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MGW21N60ED Insulated Gate Bipolar Transistor Motorola

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