Datasheet4U Logo Datasheet4U.com

MJD200 SILICON POWER TRANSISTORS

MJD200 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mou.

MJD200 Applications

* . . . designed for low voltage, low
* power, high
* gain audio amplifier applications.
* Collector
* Emitter Sustaining Voltage
* VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
* High DC Current Gain
* hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc

📥 Download Datasheet

Preview of MJD200 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MJD200
Manufacturer
Motorola
File Size
236.97 KB
Datasheet
MJD200_MotorolaInc.pdf
Description
SILICON POWER TRANSISTORS

📁 Related Datasheet

  • MJD20 - P-channel power MOSFET (Sanken)
  • MJD210 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • MJD243 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • MJD253 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • MJD2873-Q - 2A NPN transistor (nexperia)
  • MJD29 - General Purpose Amplifier (Fairchild)
  • MJD2955 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • MJD29C - General Purpose Amplifier (Fairchild)

📌 All Tags

SILICON POWER TRANSISTORS Motorola
Motorola MJD200-like datasheet