MJD200 Datasheet - Motorola

MJD200 SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. Collector Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc .

MJD200_MotorolaInc.pdf