MJD200 SILICON POWER TRANSISTORS

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mou.

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Datasheet Specifications

Part number: MJD200
Manufacturer: Motorola
File Size: 236.97 KB
Datasheet: MJD200_MotorolaInc.pdf
Description: SILICON POWER TRANSISTORS

Applications

* . . . designed for low voltage, low
* power, high
* gain audio amplifier applications.
* Collector
* Emitter Sustaining Voltage
* VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
* High DC Current Gain
* hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc

MJD200 Distributors

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MJD200 SILICON POWER TRANSISTORS Motorola

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