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MJD210 SILICON POWER TRANSISTORS

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mou.

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Datasheet Specifications

Part number
MJD210
Manufacturer
Motorola
File Size
236.97 KB
Datasheet
MJD210_MotorolaInc.pdf
Description
SILICON POWER TRANSISTORS

Applications

* . . . designed for low voltage, low
* power, high
* gain audio amplifier applications.
* Collector
* Emitter Sustaining Voltage
* VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
* High DC Current Gain
* hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc

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