MJE210 Datasheet, Transistors, Motorola

PDF File Details

Part number:

MJE210

Manufacturer:

Motorola

File Size:

255.73kb

Download:

📄 Datasheet

Description:

5 ampere power transistors.

MJE210 Application

• Applications
• Collector
    –Emitter Sustaining Voltage
    – VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• Hig

TAGS

MJE210

Motorola

📁 Related Datasheet

MJE210 - SILICON PNP TRANSISTOR (ST Microelectronics)
® MJE210 SILICON PNP TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR DESCRIPTION )The MJE210 is a silicon Epitaxial-Base PNP t.

MJE210 - PNP Epitaxial Silicon Transistor (Fairchild)
MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to M.

MJE210 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE.

MJE210 - Complementary Silicon Power Plastic Transistors (ON Semiconductor)
MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, h.

MJE210 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
MJE210 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features -，， MJE200  Lo.

MJE210G - Complementary Silicon Power Plastic Transistors (ON Semiconductor)
MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio a.

MJE200 - 5 AMPERE POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors . . . designed for low voltag.

MJE200 - NPN Epitaxial Silicon Transistor (Fairchild)
MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to M.

MJE200 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 50.

MJE200 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE.