MMBD352WT1
Motorola
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Dual schottky barrier diode.
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MMBD352WT1 - Dual Shottky Barrier Diode
(ON)
..
MMBD352WT1 Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for .
MMBD352WT1 - Dual Schottky Barrier Diode
(Leshan Radio Company)
.
MMBD352WT1G - Dual Schottky Barrier Diode
(ON Semiconductor)
MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use.
MMBD352W - SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
(PAN JIT)
MMBD101W/MMBD352W/MMBD354W/MMBD355W
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
POWER 200 mW
FEATURES
• Low Capacitance,Minimiz.
MMBD352W - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
MMBD352W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Very Low Capacitance
Low Forward Voltage PN Junction Guard Rin.
MMBD352W - Schottky Barrier Diode
(GME)
Production specification
Schottky Barrier Diode
FEATURES
Very low capacitance-less than 1.0Pf @zero volts.
Pb
Lead-free
Low forward voltage-0..
MMBD352 - SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
(Pan Jit International)
MMBD101/MMBD352/MMBD354/MMBD355
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
POWER 250 mW
FEATURES
• Low Capacitance,Minimizing .
MMBD352 - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(Won-Top Electronics)
® WON-TOP ELECTRONICS
MMBD352 / 353 / 354 / 355
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Very Low Capacitance
L
Low Forward Voltage .
MMBD352 - Dual Hot Carrier Mixer Diodes
(LGE)
MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance— Less than 1.0pF@zero V.
Low forward voltage—IF=10mA. Power diss.
MMBD352 - Dual Hot Carrier Mixer Diodes
(GME)
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance— Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipa.
