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MMBD352WT1G - Dual Schottky Barrier Diode

MMBD352WT1G Description

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use.

MMBD352WT1G Features

* Very Low Capacitance
* Less Than 1.0 pF @ 0 V
* Low Forward Voltage
* 0.5 V (Typ) @ IF = 10 mA
* AEC Qualified and PPAP Capable

MMBD352WT1G Applications

* but are suitable also for use in detector and ultra

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Dual Schottky Barrier Diode ON Semiconductor
ON Semiconductor MMBD352WT1G-like datasheet