Datasheet Details
- Part number
- MMBD352WT1G
- Manufacturer
- ON Semiconductor ↗
- File Size
- 113.12 KB
- Datasheet
- MMBD352WT1G-ONSemiconductor.pdf
- Description
- Dual Schottky Barrier Diode
MMBD352WT1G Description
MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use.
MMBD352WT1G Features
* Very Low Capacitance
* Less Than 1.0 pF @ 0 V
* Low Forward Voltage
* 0.5 V (Typ) @ IF = 10 mA
* AEC Qualified and PPAP Capable
MMBD352WT1G Applications
* but are suitable also for use in detector and ultra
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