MMBD352WT1G Datasheet - ON Semiconductor

MMBD352WT1G Dual Schottky Barrier Diode

MMBD352WT1G Features

* Very Low Capacitance

* Less Than 1.0 pF @ 0 V

* Low Forward Voltage

* 0.5 V (Typ) @ IF = 10 mA

* AEC Qualified and PPAP Capable

* NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

* These Devices are Pb

Datasheet Details

MMBD352WT1G

113.12 KB

Dual schottky barrier diode.

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MMBD352WT1G Dual Schottky Barrier Diode ON Semiconductor

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