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MMBD352WT1 - Dual Shottky Barrier Diode

Features

  • Very Low Capacitance.
  • Less Than 1.0 pF @ Zero Volts.
  • Low Forward Voltage.
  • 0.5 Volts (Typ) @ IF = 10 mA.
  • Pb.
  • Free Package is Available http://onsemi. com 1 ANODE 3.

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Datasheet Details

Part number MMBD352WT1
Manufacturer ON
File Size 69.31 KB
Description Dual Shottky Barrier Diode
Datasheet download datasheet MMBD352WT1 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Available http://onsemi.com 1 ANODE 3 CATHODE/ANODE 2 CATHODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 3 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
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