MMBD352LT1G Datasheet (ON Semiconductor) - Dual Hot Carrier Mixer Diodes

MMBD352LT1G, Dual Hot Carrier Mixer Diodes

SOT *23 (TO *236) Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba o

MMBD352LT1G Features

* Very Low Capacitance

* Less Than 1.0 pF @ Zero V

* Low Forward Voltage

* 0.5 V (Typ) @ IF = 10 mA

* NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

* Q101 Qualified and PPAP Capable