MMBD353LT1G Datasheet - ON Semiconductor

Dual Hot Carrier Mixer Diodes

MMBD353LT1G Features

* Very Low Capacitance

* Less Than 1.0 pF @ Zero V

* Low Forward Voltage

* 0.5 V (Typ) @ IF = 10 mA

* NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

* Q101 Qualified and PPAP Capable

MMBD353LT1G General Description

SOT *23 (TO *236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba o.

MMBD353LT1G Datasheet (230.01 KB)

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MMBD353LT1G

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ON Semiconductor ↗

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230.01 KB

Description:

Dual hot carrier mixer diodes.
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily.

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MMBD353LT1G Dual Hot Carrier Mixer Diodes ON Semiconductor

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MMBD353LT1G Features

MMBD353LT1G General Description

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