MMBD353LT1G Datasheet - ON Semiconductor

MMBD353LT1G Dual Hot Carrier Mixer Diodes

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MMBD353LT1G Features

* Very Low Capacitance

* Less Than 1.0 pF @ Zero V

* Low Forward Voltage

* 0.5 V (Typ) @ IF = 10 mA

* NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

* Q101 Qualified and PPAP Capable

MMBD353LT1G Datasheet (230.01 KB)