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MMBD301LT1G - Silicon Hot-Carrier Diodes

MMBD301LT1G Description

MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high <.

MMBD301LT1G Features

* Extremely Low Minority Carrier Lifetime
* 15 ps (Typ)
* Very Low Capacitance
* 1.5 pF (Max) @ VR = 15 V
* Low Reverse Leakage
* IR = 13 nAdc (Typ) MBD301, MMBD301

MMBD301LT1G Applications

* They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low
* cost, high

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Silicon Hot-Carrier Diodes ON Semiconductor
ON Semiconductor MMBD301LT1G-like datasheet