MMBF0202PLT1 Datasheet (Motorola) - P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MMBF0202PLT1, P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBF0202PLT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry.

Typical applications are dc

MMBF0202PLT1 Features

* NESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. B S 1 2 V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLI