MMBT6427LT1 Datasheet - Motorola

MMBT6427LT1 Darlington Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6427LT1/D Darlington Transistor NPN Silicon COLLECTOR 3 BASE 1 MMBT6427LT1 Motorola Preferred Device EMITTER 2 3 1 2 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) THERMAL CHARA.

MMBT6427LT1 Features

* THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60

MMBT6427LT1_MotorolaInc.pdf