MRF187
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF187/D
The RF MOSFET Line
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon source amplifier applications in 26 volt base station equipment.
- Guaranteed Performance @ 880 MHz, 26 Volts Output Power
- 85 Watts PEP Power Gain
- 12 d B Efficiency
- 30% Intermodulation Distortion
- - 28 d Bc
- 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW
- Excellent Thermal Stability
- Characterized with Series Equivalent Large- Signal Impedance Parameters
- Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
1.0 GHz, 85 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
LIFETIME BUY
CASE 465- 06, STYLE 1 NI- 780 MRF187
CASE 465A- 06, STYLE 1 NI- 780S MRF187SR3
MAXIMUM RATINGS
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