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MRF857S NPN SILICON RF POWER TRANSISTOR

MRF857S Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF857/D The RF Line NPN Silicon RF Power Transistor Designed fo.

MRF857S Features

* , Denver, Colorado 80217. 303
* 675
* 2140 or 1
* 800
* 441
* 2447 JAPAN: Nippon Motorola Ltd. : SPD, Strategic Planning Office, 4
* 32
* 1, Nishi
* Gotanda, Shinagawa
* ku, Tokyo 141, Japan. 81
* 3
* 5487
* 8488 Mfax™: RMFAX0@e

MRF857S Applications

* in industrial and commercial equipment operating in the range of 800
* 960 MHz.
* Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.1 Watts CW Minimum Power Gain = 12.5 dB Minimum ITO = + 43 dBm Typical Noise Figure = 5.25 dB
* Characterized with Small

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Datasheet Details

Part number
MRF857S
Manufacturer
Motorola
File Size
261.98 KB
Datasheet
MRF857S_Motorola.pdf
Description
NPN SILICON RF POWER TRANSISTOR

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NPN SILICON POWER TRANSISTOR Motorola
Motorola MRF857S-like datasheet