MTD9N10E Datasheet - Motorola

MTD9N10E TMOS POWER FET

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching a.

MTD9N10E Features

* nce in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated int

MTD9N10E Datasheet (207.99 KB)