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MTD9N10E TMOS POWER FET

MTD9N10E Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.

MTD9N10E Features

* nce in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated int

MTD9N10E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTD9N10E
Manufacturer
Motorola
File Size
207.99 KB
Datasheet
MTD9N10E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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