Datasheet Details
Part number:
MTD9N10E
Manufacturer:
Motorola
File Size:
207.99 KB
Description:
Tmos power fet.
Datasheet Details
Part number:
MTD9N10E
Manufacturer:
Motorola
File Size:
207.99 KB
Description:
Tmos power fet.
MTD9N10E, TMOS POWER FET
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching a
MTD9N10E Features
* nce in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated int
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