Datasheet Specifications
- Part number
- MTD9N10E
- Manufacturer
- Motorola
- File Size
- 207.99 KB
- Datasheet
- MTD9N10E_Motorola.pdf
- Description
- TMOS POWER FET
Description
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD9N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* nce in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated intApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTD9N10E Distributors
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