MTP1302 Datasheet (Motorola)

MTP1302, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1302/D Advance Information HDTMOS E-FET™ High Density Power FET N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power suppl

MTP1302 Features

* 18 15 12 1000 VDD = 15 V ID = 20 A VGS = 10 V TJ = 25°C tf tr td(off) td(on) 100 t, TIME (ns) 10 1.0 1.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26 28 30 QG, TOTAL GATE CHARGE (nC) 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. Gate

* To

* Source and Drain

* To

* Sourc