Datasheet Specifications
- Part number
- MTP1302
- Manufacturer
- Motorola
- File Size
- 166.70 KB
- Datasheet
- MTP1302_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1302/D Advance Information HDTMOS E-FET™ High Density Power FET N *Channel .Features
* 18 15 12 1000 VDD = 15 V ID = 20 A VGS = 10 V TJ = 25°C tf tr td(off) td(on) 100 t, TIME (ns) 10 1.0 1.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26 28 30 QG, TOTAL GATE CHARGE (nC) 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. GateApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.MTP1302 Distributors
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