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MTP1306 TMOS POWER FET

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1306/D Advance Information HDTMOS E-FET.™ High Density Power FET N *Channel.

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Datasheet Specifications

Part number
MTP1306
Manufacturer
Motorola
File Size
171.45 KB
Datasheet
MTP1306_Motorola.pdf
Description
TMOS POWER FET

Features

* Source and Drain
* To
* Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS The switching characteristics of a MOSFET body diode are very important in systems using it as a freewhee

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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