MTP1306 Datasheet (Motorola)

MTP1306, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1306/D Advance Information HDTMOS E-FET.™ High Density Power FET N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in po

MTP1306 Features

* Source and Drain

* To

* Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN

* TO

* SOURCE DIODE CHARACTERISTICS The switching characteristics of a MOSFET body diode are very important in systems using it as a freewhee