MTP8N50E Datasheet (Motorola) - Power Field Effect Transistor

MTP8N50E, Power Field Effect Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain <

MTP8N50E Features

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