MTP8N50E Datasheet, Transistor, Motorola

MTP8N50E Features

• Transistor (seconds) Figure 14. Thermal Response 0.1 MTP8N50E 1.0 10 Motorola TMOS Power MOSFET Transistor Device Data 5 MTP8N50E PACKAGE DIMENSIONS Q H Z B 4 1 23 F T
    –

PDF File Details

Part number:

MTP8N50E

Manufacturer:

Motorola

File Size:

153.76kb

Download:

📄 Datasheet

Description:

Power field effect transistor.

MTP8N50E Application

• Applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and

TAGS

MTP8N50E

Motorola

📁 Related Datasheet

MTP8N50E - N-Channel Power MOSFET (ON Semiconductor)
TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to p.

MTP8107X8 - P-Channel Enhancement Mode MOSFET (CYStech)
CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET MTP8107X8 Feat.

MTP850 - TETRA Portable Terminal Basic User Guide (Motorola)
MTP850 TETRA Portable Terminal Basic User Guide MENU 1 4 ghi 7pqrs 2 abc 5 jkl 8 tuv 0 3 def 6mno 9wxyz 6866537D79-A 19 18 17 (b) 16 17 (a) 15 (.

MTP8P08 - Power Field Effect Transistor (Motorola Semiconductor)
.

MTP8P10 - POWER FIELD EFFECT TRANSISTOR (Motorola)
.

MTP8P25 - Power Field Effect Transistor (Motorola)
.

MTP10-B7F55 - Thermopile Sensor (MemsFrontier)
Thermopile Sensor Specification Thermopile Sensor MTP10-B7F55 Specification： MEMS Thermopile Element TO-46 Package High Sensitivity 5.5 μm LWP Fi.

MTP1013C3 - -20V P-CHANNEL MOSFET (CYStech Electronics)
CYStech Electronics Corp. Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2018.10.24 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSF.

MTP10N05 - (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
w w w .D at aS he et 4U .c om .. .

MTP10N06 - (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
w w w .D at aS he et 4U .c om .. .