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SLH60R041GTDI

600V N-Channel MOSFET

SLH60R041GTDI Features

* - 650V@Tj=150℃ - 70A,600V, RDS(on) =37.5mΩ@VGS = 10 V - Low gate charge(typ. Qg =136nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, T

SLH60R041GTDI General Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLH60R041GTDI Datasheet (1.25 MB)

Preview of SLH60R041GTDI PDF

Datasheet Details

Part number:

SLH60R041GTDI

Manufacturer:

Msemitek

File Size:

1.25 MB

Description:

600v n-channel mosfet.

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TAGS

SLH60R041GTDI 600V N-Channel MOSFET Msemitek

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