SLH60R041GTDI Datasheet (Msemitek) - 600V N-Channel MOSFET

SLH60R041GTDI, 600V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLH60R041GTDI Features

* - 650V@Tj=150℃ - 70A,600V, RDS(on) =37.5mΩ@VGS = 10 V - Low gate charge(typ. Qg =136nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, T