SLH65R039GTDI

650V N-Channel MOSFET

Msemitek

SLH65R039GTDI Features

* - 700V@Tj=150℃ - 76A,650V, RDS(on) =35mΩ@VGS = 10 V - Low gate charge(typ. Qg =159nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TST

SLH65R039GTDI General Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLH65R039GTDI Datasheet (1.26 MB)

SLH65R039GTDI Datasheet Preview — Preview of SLH65R039GTDI PDF

Datasheet Details

Part number:

SLH65R039GTDI

Manufacturer:

Msemitek

File Size:

1.26 MB

Description:

650v n-channel mosfet.

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SLH65R039GTDI 650V N-Channel MOSFET Msemitek

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SLH65R039GTDI Features

SLH65R039GTDI General Description

Datasheet Details

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Description:

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