SLH65R039GTDI Datasheet - Msemitek

SLH65R039GTDI 650V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLH65R039GTDI Features

* - 700V@Tj=150℃ - 76A,650V, RDS(on) =35mΩ@VGS = 10 V - Low gate charge(typ. Qg =159nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TST

SLH65R039GTDI Datasheet (1.26 MB)