SLH60R043E7D Datasheet - Msemitek

SLH60R043E7D 600V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLH60R043E7D Features

* - 65A, 600V@ TJ,max, RDS(on)Typ =36mΩ@VGS = 10 V - Fast Recovery Body-Diode - Ultra high ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG

SLH60R043E7D Datasheet (807.59 KB)