SLH60R042SS

N-Channel MOSFET

Maple Semiconductor

SLH60R042SS Features

* - 76A, 600V, RDS(on) typ.= 36mΩ@VGS =10 V - Low gate charge ( typical 142nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Con

SLH60R042SS General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh

*nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfor.

SLH60R042SS Datasheet (446.97 KB)

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SLH60R042SS

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Maple Semiconductor

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446.97 KB

Description:

N-channel mosfet.

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SLH60R042SS N-Channel MOSFET Maple Semiconductor

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SLH60R042SS Features

SLH60R042SS General Description

Datasheet Details

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