Datasheet4U Logo Datasheet4U.com

MJ3001 Medium-power complementary Silicon Transistors

MJ3001 Description

MJ2501 & MJ3001 10A, 150W, 80V .

MJ3001 Applications

* High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A.
* Monolithic construction with built Base-Emitter Shunt Resistors. Pin 1. Base 2. Emitter Collector(Case) Dimensions A B C D E F G H I J K Minimum Maximum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.57 39

📥 Download Datasheet

Preview of MJ3001 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MJ3001
Manufacturer
Multicomp
File Size
304.41 KB
Datasheet
MJ3001-Multicomp.pdf
Description
Medium-power complementary Silicon Transistors

📁 Related Datasheet

  • MJ3000 - 10 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ3041 - NPN Transistor (INCHANGE)
  • MJ3055 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • MJ3101 - Bipolar NPN Device (Seme LAB)
  • MJ3202 - Bipolar NPN Device (Seme LAB)
  • MJ3281A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • MJ3738 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • MJ3771 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)

📌 All Tags

Medium-power complementary Silicon Transistors Multicomp
Multicomp MJ3001-like datasheet