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MJE2955T - Complementary Power Transistors

MJE2955T Description

MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switchin.

MJE2955T Features

* Power dissipation-PD = 75W at TC = 25°C.
* DC current gain hFE = 20 (Minimum) at IC = 4.0A.
* VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.

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Datasheet Details

Part number
MJE2955T
Manufacturer
Multicomp
File Size
250.25 KB
Datasheet
MJE2955T-Multicomp.pdf
Description
Complementary Power Transistors

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Complementary Power Transistors Multicomp
Multicomp MJE2955T-like datasheet