* Power dissipation-PD = 75W at TC = 25°C.
* DC current gain hFE = 20 (Minimum) at IC = 4.0A.
* VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.
MJE3055T Datasheet (250.25 KB)
MJE3055T
Multicomp
250.25 KB
Complementary power transistors.
MJE2955T, 3055T
Complementary Power Transistors
Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switchin.
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