MJE3055T, MJE2955T Datasheet - Multicomp

MJE3055T Complementary Power Transistors

MJE3055T Features

* Power dissipation-PD = 75W at TC = 25°C.

* DC current gain hFE = 20 (Minimum) at IC = 4.0A.

* VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.

MJE2955T-Multicomp.pdf

MJE3055T Datasheet Preview — This datasheet PDF includes multiple part numbers: MJE3055T, MJE2955T. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MJE3055T, MJE2955T

Manufacturer:

Multicomp

File Size:

250.25 KB

Description:

Complementary power transistors.

Note:

This datasheet PDF includes multiple part numbers: MJE3055T, MJE2955T.
Please refer to the document for exact specifications by model.

MJE3055T Distributor

📁 Related Datasheet

MJE3055 NPN SILICON POWER TRANSISTOR (DIGITRON)

MJE3055 NPN Transistor (INCHANGE)

MJE3055 NPN Silicon Transistor (Fairchild)

MJE3055 COMPLEMENTARY SILICON POWER TRANSISTORS (ST Microelectronics)

MJE3055 COMPLEMENTARY SILICON POWER TRANSISTORS (ON)

MJE3055 Plastic-Encapsulate Transistors (GME)

MJE3055 (MJE2955 / MJE3055) POWER TRANSISTORS (Motorola)

MJE3055 NPN Transistor (JIANGSU CHANGJIANG ELECTRONICS)

TAGS

MJE3055T MJE2955T Complementary Power Transistors Multicomp