1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
N.
N+
Drain electrode
2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to.
AQV453-NAiS.pdf
