* 1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed t
AQV410EH Datasheet (161.61 KB)
AQV410EH
Panasonic
161.61 KB
Photo mos relay.
Normally closed type with reinforced insulation
(AQV410EH, 414EH) (AQV412EH)
GE 1 Form B
(AQV41❍EH)
8.8 .346
6.4 .252
8.8 .346
3.9 .154
6.4 .252.
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