* 1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed t
AQV412EH Datasheet (161.61 KB)
AQV412EH
Panasonic
161.61 KB
Photo mos relay.
Normally closed type with reinforced insulation
(AQV410EH, 414EH) (AQV412EH)
GE 1 Form B
(AQV41❍EH)
8.8 .346
6.4 .252
8.8 .346
3.9 .154
6.4 .252.
📁 Related Datasheet
AQV410EH Photo MOS Relay (Panasonic)
AQV414 HIGH VOLTAGE/ PHOTO MOS RELAY (Etc)
AQV414 Photo MOS Relay (Panasonic)
AQV414A HIGH VOLTAGE/ PHOTO MOS RELAY (Etc)
AQV414A Photo MOS Relay (Panasonic)
AQV414E Photo MOS Relay (Panasonic)
AQV414EH Photo MOS Relay (Panasonic)
AQV414S HIGH VOLTAGE/ PHOTO MOS RELAY (Etc)
AQV453 Photo MOS Relay (Panasonic)
AQV453 Photo MOS Relay (NAiS)
