* 1. 1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate e
AQV454H
Panasonic
507.14 KB
Photo mos relay.
AQV45, AQV454H
8.8 .346
6.4 .252
3.9 .154
8.8 .346
Height includes standoff
CCAAD DDaattaa
6.4 .252
3.6 .142
mm inch
16
25 34
HE 1 Form B (AQ.
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