AQV454H Features
* 1. 1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate e
Datasheet Details
AQV454H, AQV453
Panasonic
507.14 KB
Photo mos relay.
This datasheet PDF includes multiple part numbers: AQV454H, AQV453.
Please refer to the document for exact specifications by model.
AQV454H Distributor
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