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NCE12P09S P-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET .
The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .

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Datasheet Specifications

Part number
NCE12P09S
Manufacturer
NCE Power Semiconductor
File Size
365.48 KB
Datasheet
NCE12P09S-NCEPowerSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
* Advanced trench MOSFET process technology Only

NCE12P09S Distributors

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📌 All Tags

P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor
NCE Power Semiconductor NCE12P09S-like datasheet