NCE12P09S Datasheet, Mosfet, NCE Power Semiconductor

NCE12P09S Features

• Mosfet
• VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
• Advanced trench MOSFET process technology Only
• Ultra low o

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Part number:

NCE12P09S

Manufacturer:

NCE Power Semiconductor

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365.48kb

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This de

NCE12P09S Application

• Applications General Features
• VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
• A

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NCE12P09S

NCE Power Semiconductor

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