NCE3401Y - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE3401Y
Manufacturer	NCE Power Semiconductor
File Size	246.68 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3401Y-NCEPowerSemiconductor.pdf

The NCE3401Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram Marking and pin Assignment.

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Published: Jun 2, 2018 |