NCE30H21 Datasheet, Mosfet, NCEPOWER

NCE30H21 Features

• Mosfet
• VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and current
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Part number:

NCE30H21

Manufacturer:

NCEPOWER

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324.15kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE30H21 Application

• Applications GENERAL FEATURES
• VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
• High density cell design for ultra low Rds

TAGS

NCE30H21

NCEPOWER

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