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NCE30H21

N-Channel Enhancement Mode Power MOSFET

NCE30H21 Features

* VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology

NCE30H21 Datasheet (324.15 KB)

Preview of NCE30H21 PDF

Datasheet Details

Part number:

NCE30H21

Manufacturer:

NCEPOWER

File Size:

324.15 KB

Description:

N-channel enhancement mode power mosfet.

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NCE30H21 N-Channel Enhancement Mode Power MOSFET NCEPOWER

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