NCE30H11BK Datasheet, Mosfet, NCE Power Semiconductor

NCE30H11BK Features

• Mosfet
• VDS =30V,ID =110A Schematic diagram RDS(ON) =3.2mΩ (typical) @ VGS=10V RDS(ON) =4.0mΩ (typical) @ VGS=4.5V
• High density cell design for ultra low Rdson

PDF File Details

Part number:

NCE30H11BK

Manufacturer:

NCE Power Semiconductor

File Size:

424.29kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE30H11BK Application

• Applications General Features
• VDS =30V,ID =110A Schematic diagram RDS(ON) =3.2mΩ (typical) @ VGS=10V RDS(ON) =4.0mΩ (typical) @ VGS=

TAGS

NCE30H11BK

NCE Power Semiconductor

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