NCE30H11BK - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE30H11BK
Manufacturer	NCE Power Semiconductor
File Size	424.29 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H11BK-NCEPowerSemiconductor.pdf

The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V,ID =110A Schematic diagram RDS(ON) =3.2mΩ (typical) @ VGS=10V RDS(ON) =4.0mΩ (typical) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jan 22, 2025 |