NCE30P50G Datasheet, Mosfet, NCEPOWER

NCE30P50G Features

• Mosfet
• VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good

PDF File Details

Part number:

NCE30P50G

Manufacturer:

NCEPOWER

File Size:

370.50kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE30P50G Application

• Applications General Features
• VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V
• High density cell design for ultra low Rdson

TAGS

NCE30P50G

NCEPOWER

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