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NCE30P50G Datasheet - NCEPOWER

NCE30P50G P-Channel Enhancement Mode Power MOSFET

NCE30P50G Features

* VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology for high

NCE30P50G-NCEPOWER.pdf

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Datasheet Details

Part number:

NCE30P50G

Manufacturer:

NCEPOWER

File Size:

370.50 KB

Description:

P-channel enhancement mode power mosfet.

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