NCE30P30K Datasheet, Mosfet, NCE Power Semiconductor

NCE30P30K Features

• Mosfet
• VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage an

PDF File Details

Part number:

NCE30P30K

Manufacturer:

NCE Power Semiconductor

File Size:

423.17kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suite

NCE30P30K Application

• Applications General Features
• VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
• High density cell design f

TAGS

NCE30P30K

NCE Power Semiconductor

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