NCE3080K - N-Channel Enhancement Mode Power MOSFET
NCE3080K Features
* VDS =30V,ID =80A RDS(ON) < 6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special proces
