NCE3080I Datasheet, Mosfet, NCE Power Semiconductor

NCE3080I Features

• Mosfet
• VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram
• High density cell design for ultra low Rdson
• Fully characterized aval

PDF File Details

Part number:

NCE3080I

Manufacturer:

NCE Power Semiconductor

File Size:

344.03kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE3080I Application

• Applications General Features
• VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram
• High densi

TAGS

NCE3080I

NCE Power Semiconductor

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