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NCE3007S - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3007S
Manufacturer	NCE Power Semiconductor
File Size	381.43 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3007S-NCEPowerSemiconductor.pdf

NCE3007S Product details

Description

The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.

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Published: May 22, 2015 |