NCE3018AS Datasheet, Mosfet, NCE Power Semiconductor

NCE3018AS Features

• Mosfet
• VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and c

PDF File Details

Part number:

NCE3018AS

Manufacturer:

NCE Power Semiconductor

File Size:

376.15kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE3018AS Application

• Applications General Features
• VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V
• High density cell design for

TAGS

NCE3018AS

NCE Power Semiconductor

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