NCE3011E Datasheet, Mosfet, NCE Power Semiconductor

NCE3011E Features

• Mosfet
• VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
• High power and current handing capability
• Lead free product is a

PDF File Details

Part number:

NCE3011E

Manufacturer:

NCE Power Semiconductor

File Size:

356.67kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

NCE3011E Application

• Applications It is ESD protested. General Features
• VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V

TAGS

NCE3011E

NCE Power Semiconductor

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