NCE3010S Datasheet, Mosfet, NCEPOWER

NCE3010S Features

• Mosfet
• VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage an

PDF File Details

Part number:

NCE3010S

Manufacturer:

NCEPOWER

File Size:

316.09kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE3010S Application

• Applications GENERAL FEATURES
• VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V
• High density cell design f

TAGS

NCE3010S

NCEPOWER

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