NCE3080IA Datasheet, Mosfet, NCE Power Semiconductor

NCE3080IA Features

• Mosfet
• VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and cu

PDF File Details

Part number:

NCE3080IA

Manufacturer:

NCE Power Semiconductor

File Size:

283.06kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE3080IA Application

• Applications General Features
• VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
• High density cell design for u

TAGS

NCE3080IA

NCE Power Semiconductor

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