NCE30H10K Datasheet, Mosfet, NCE Power Semiconductor

NCE30H10K Features

• Mosfet
• VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE30H10K

Manufacturer:

NCE Power Semiconductor

File Size:

367.63kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE30H10K Application

• Applications General Features
• VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
• High density cell design for ultra low Rd

TAGS

NCE30H10K

NCE Power Semiconductor

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