NCE30H11G Datasheet, Mosfet, NCE Power Semiconductor

NCE30H11G Features

• Mosfet
• VDS =30V,ID =110A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.0mΩ @ VGS=4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage an

PDF File Details

Part number:

NCE30H11G

Manufacturer:

NCE Power Semiconductor

File Size:

373.36kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE30H11G Application

• Applications General Features
• VDS =30V,ID =110A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.0mΩ @ VGS=4.5V
• High density cell design f

TAGS

NCE30H11G

NCE Power Semiconductor

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