NCE8010S Datasheet, Mosfet, NCE Power Semiconductor

NCE8010S Features

• Mosfet
• VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ)
• High density cell design for ultra low Rdson
• Fully characteriz

PDF File Details

Part number:

NCE8010S

Manufacturer:

NCE Power Semiconductor

File Size:

403.34kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE8010S Application

• Applications General Features
• VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ)
• Hig

TAGS

NCE8010S

NCE Power Semiconductor

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