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NCE8010S N-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE8010S NCE N-Channel Enhancement Mode Power MOSFET .
The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
NCE8010S
Manufacturer
NCE Power Semiconductor
File Size
403.34 KB
Datasheet
NCE8010S-NCEPowerSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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