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NCE8010S - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE8010S
Manufacturer	NCE Power Semiconductor
File Size	403.34 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8010S-NCEPowerSemiconductor.pdf

NCE8010S Product details

Description

The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 2, 2018 |