NCE80H11H Datasheet - NCE Power Semiconductor

NCE80H11H - N-Channel Enhancement Mode Power MOSFET

NCE80H11H Features

* VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technol

Datasheet Details

NCE80H11H

NCE Power Semiconductor

323.47 KB

N-channel enhancement mode power mosfet.

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