NCE80H14 Datasheet, Mosfet, NCE Power Semiconductor

NCE80H14 Features

• Mosfet
• VDS =80V,ID =140A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.9mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE80H14

Manufacturer:

NCE Power Semiconductor

File Size:

324.47kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE80H14 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE80H14 Application

• Applications General Features
• VDS =80V,ID =140A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.9mΩ)
• High density cell design for ultra low

TAGS

NCE80H14

NCE Power Semiconductor

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