NCE80H16 Datasheet, Mosfet, NCE Power Semiconductor

NCE80H16 Features

• Mosfet
• VDS =80V,ID =160A RDS(ON) <4.7mΩ @ VGS=10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good st

PDF File Details

Part number:

NCE80H16

Manufacturer:

NCE Power Semiconductor

File Size:

313.89kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE80H16 Application

• Applications General Features
• VDS =80V,ID =160A RDS(ON) <4.7mΩ @ VGS=10V
• High density cell design for ultra low Rdson

TAGS

NCE80H16

NCE Power Semiconductor

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